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1.
公开(公告)号:US20220005702A1
公开(公告)日:2022-01-06
申请号:US17368437
申请日:2021-07-06
Applicant: STMicroelectronics S.r.l.
Inventor: Nicolo' PILUSO , Andrea SEVERINO , Stefania RINALDI Beatrice , AngeloAnnibale MAZZEO , Leonardo CAUDO , Alfio RUSSO , Giovanni FRANCO , Anna BASSI
IPC: H01L21/306 , H01L21/02
Abstract: A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects.
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公开(公告)号:US20230128739A1
公开(公告)日:2023-04-27
申请号:US17962090
申请日:2022-10-07
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Agata GRASSO , Nicolo' PILUSO , Andrea SEVERINO , Brunella CAFRA
IPC: B24B37/10 , H01L21/02 , B24B37/04 , B24B37/015 , B24B37/30
Abstract: A Chemical Mechanical Polishing, CMP, process applied to a wafer of Silicon Carbide having a thickness of, or lower than, 200 μm, comprising the steps of: arranging the wafer on a supporting head of a CMP processing apparatus, the wafer having a front side and a back side opposite to one another, the front side housing at least one electronic component and being coupled to the supporting head; deliver a polishing slurry on the wafer, wherein the polishing slurry has a pH in the range 2-3; pressing the back side of the wafer against a polishing pad of the CMP apparatus exerting, by the supporting head, a pressure on the polishing pad in the range 5-20 kPa; setting a rotation of the polishing pad in the range 30-180 rpm, and setting a rotation of polishing head in the range 30-180 rpm; setting and maintaining a CMP process temperature equal to, or below, 50° C.
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