- 专利标题： THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
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申请号： US17145229申请日： 2021-01-08
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公开(公告)号： US20220020764A1公开(公告)日： 2022-01-20
- 发明人: Sung Lae OH , Jin Ho KIM , Sang Woo PARK , Sang Hyun SUNG
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2020-0089546 20200720
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L23/522 ; H01L23/528 ; H01L27/11556 ; H01L21/768
摘要：
A three-dimensional memory device includes an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers which are alternately stacked on a substrate; a first stairway structure and a second stairway structure defined in the electrode structure, and positioned at different heights from each other; a sidewall of the electrode structure formed due to a difference in height between the first stairway structure and the second stairway structure; and a dielectric support passing through the electrode structure, and isolating a corner portion of the sidewall from the plurality of electrode layers.
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