Invention Application
- Patent Title: SILICON OXIDE NITRIDE TUNNEL DIELECTRIC FOR A STORAGE TRANSISTOR IN A 3-DIMENSIONAL NOR MEMORY STRING ARRAY
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Application No.: US17494549Application Date: 2021-10-05
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Publication No.: US20220028871A1Publication Date: 2022-01-27
- Inventor: Scott Brad Herner , Christopher J. Petti , George Samachisa , Wu-Yi Henry Chien
- Applicant: SUNRISE MEMORY CORPORATION
- Applicant Address: US CA San Jose
- Assignee: SUNRISE MEMORY CORPORATION
- Current Assignee: SUNRISE MEMORY CORPORATION
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/1157
- IPC: H01L27/1157 ; H01L27/11578 ; G11C16/04
Abstract:
A thin-film storage transistor in a NOR memory string has a gate dielectric layer that includes a silicon oxide nitride (SiON) tunnel dielectric layer. In one embodiment, the SiON tunnel dielectric layer has a thickness between 0.5 to 5.0 nm thick and an index of refraction between 1.5 and 1.9. The SiON tunnel dielectric layer may be deposited at between 720° C. and 900° C. and between 100 and 800 mTorr vapor pressure, using an LPCVD technique under DCS, N2O, and NH3 gas flows. The SiON tunnel dielectric layer may have a nitrogen content of 1-30 atomic percent (at %).
Information query
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