Invention Application
- Patent Title: LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, ELECTRONIC DEVICE, AND LIGHTING DEVICE
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Application No.: US17610760Application Date: 2020-05-07
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Publication No.: US20220069246A1Publication Date: 2022-03-03
- Inventor: Satoshi SEO , Hiroshi KADOMA , Takumu OKUYAMA , Naoaki HASHIMOTO , Yusuke TAKITA , Tsunenori SUZUKI
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP ATSUGI-SHI, KANAGAWA-KEN
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP ATSUGI-SHI, KANAGAWA-KEN
- Priority: JP2019-094017 20190517,JP2019-216119 20191129
- International Application: PCT/IB2020/054305 WO 20200507
- Main IPC: H01L51/50
- IPC: H01L51/50

Abstract:
A light-emitting device having a long lifetime is provided. In a light-emitting device that includes an EL layer between a pair of electrodes, the carrier balance is controlled with a hole-injection layer and an electron-transport layer of the EL layer having certain structures, so that the carrier balance spontaneously changes during driving and the initial degradation of the light-emitting device is inhibited. In addition, at this time, the rate of the spontaneous change is low when an electron-injection barrier at the interface between a light-emitting layer and the electron-transport layer of the EL layer which are stacked is high; thus, it is possible to obtain a light-emitting device which is excellent in terms of long-term degradation.
Information query
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