- 专利标题: PHOTOVOLTAIC DEVICES INCLUDING FLEXIBLE BYPASS DIODE CIRCUIT
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申请号: US17474884申请日: 2021-09-14
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公开(公告)号: US20220085219A1公开(公告)日: 2022-03-17
- 发明人: James G. NEFF , Paul E. SIMS
- 申请人: Utica Leaseco, LLC
- 申请人地址: US MI Rochester Hills
- 专利权人: Utica Leaseco, LLC
- 当前专利权人: Utica Leaseco, LLC
- 当前专利权人地址: US MI Rochester Hills
- 主分类号: H01L31/02
- IPC分类号: H01L31/02 ; H01L31/05 ; H01L31/18
摘要:
A photovoltaic device may include a flexible diode circuit having one or more bypass diodes mounted to one or more semiconductor layers using surface mount technology (SMT). The bypass diode and the one or more of the semiconductor layers may allow the flexible diode circuit to be manufactured as a thin, flexible ribbon, thereby providing efficiency in manufacturing and storing of the flexible diode circuit and/or the photovoltaic device, and also increasing a packing factor and areal power of the photovoltaic device, as compared to a typical photovoltaic device.
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