Invention Application
- Patent Title: TUNABLE MONOLITHIC GROUP III-NITRIDE FILTER BANKS
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Application No.: US17018897Application Date: 2020-09-11
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Publication No.: US20220085795A1Publication Date: 2022-03-17
- Inventor: Jason C. Soric , Jeffrey R. Laroche , Eduardo M. Chumbes , Adam E. Peczalski
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Main IPC: H03H9/54
- IPC: H03H9/54 ; H01L27/20 ; H01L29/20 ; H01L29/205 ; H01L29/778 ; H03H9/56 ; H01L21/02 ; H01L29/66 ; H03H3/02 ; H03F3/195

Abstract:
Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each of the switching elements may comprise at least one of a scandium aluminum nitride (ScAIN) or other Group III-Nitride transistor structure fabricated on the single crystal base. In these embodiments, each channel filter comprises a multi-layered ScAIN structure comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base. The ScAIN layers for each channel filter may be based on desired frequency characteristics of an associated one of the RF channels.
Public/Granted literature
- US11848662B2 Tunable monolithic group III-nitride filter banks Public/Granted day:2023-12-19
Information query
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