Invention Application
- Patent Title: MEMORY DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
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Application No.: US17460873Application Date: 2021-08-30
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Publication No.: US20220122933A1Publication Date: 2022-04-21
- Inventor: Sungmin HWANG , Jiwon KIM , Jaeho AHN , Joonsung LIM , Sukkang SUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0137084 20201021
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L25/18 ; H01L25/00

Abstract:
A memory device including a first structure; and a second structure on the first structure, wherein the first structure includes a first substrate; a peripheral circuit on the first substrate; a first insulating layer covering the first substrate and the peripheral circuit; and a first bonding pad on the first insulating layer, the second structure includes a second substrate; a memory cell array on a first surface of the second substrate; a second insulating layer covering the first surface of the second substrate and the memory cell array; a conductive pattern at least partially recessed from a second surface of the second substrate; and a second bonding pad on the second insulating layer, the first bonding pad is in contact with the second bonding pad, and the conductive pattern is spaced apart from the second insulating layer.
Public/Granted literature
- US11967574B2 Memory device and data storage system including the same Public/Granted day:2024-04-23
Information query
IPC分类: