ELECTRONIC DEVICE COMPRISING SENSOR PANEL

    公开(公告)号:US20250060787A1

    公开(公告)日:2025-02-20

    申请号:US18937655

    申请日:2024-11-05

    Abstract: An electronic device may include: a first housing; a second housing; a hinge structure; a display; and a sensor panel, wherein the sensor panel comprises: a support layer which comprises a polymer inclusive material and is in contact with an adhesive material arranged on at least one of a first surface of the first housing and a third surface of the second housing; a shielding layer arranged on the support layer; a first insulating layer arranged on the shielding layer; a first conductive pattern arranged on the first insulating layer; a second insulating layer arranged on the first conductive pattern; a second conductive pattern arranged on the second insulating layer; and a third insulating layer arranged on the second conductive pattern and facing one surface of the display, wherein the thickness of at least one of the first insulating layer and the third insulating layer is greater than the thickness of the second insulating layer.

    IMAGE CONTENT TRANSMITTING METHOD AND DEVICE USING EDGE COMPUTING SERVICE

    公开(公告)号:US20230079171A1

    公开(公告)日:2023-03-16

    申请号:US17990319

    申请日:2022-11-18

    Abstract: The present disclosure relates to a server, an electronic device and their methods of transmitting or receiving image content. In one embodiment, a method performed by the server includes obtaining sensor information including orientation information detected by the electronic device connected to the server; obtaining state information regarding the server and the electronic device; identifying a size of a first partial image and a position of the first partial image, based on the sensor information and the state information; generating a first frame by encoding the first partial image, based on the identified size of the first partial image or identified position of the first partial image; and transmitting the generated first frame to the electronic device.

    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20220375959A1

    公开(公告)日:2022-11-24

    申请号:US17552812

    申请日:2021-12-16

    Abstract: Disclosed are a three-dimensional semiconductor memory device and an electronic system including the same. The device includes a substrate, a cell array structure provided on the substrate to include a plurality of stacked electrodes spaced apart from each other, an uppermost one of the electrodes being a first string selection line, a vertical channel structure provided to penetrate the cell array structure and connected to the substrate, a conductive pad provided in an upper portion of the vertical channel structure, a bit line on the cell array structure, a bit line contact electrically connecting the bit line to the conductive pad, and a cutting structure penetrating the first string selection line. The cutting structure penetrates a portion of the conductive pad. A bottom surface of the bit line contact includes first and second bottom surfaces in contact with the conductive pad and the cutting structure, respectively.

    SEMICONDUCTOR DEVICES INCLUDING SUPPORTER

    公开(公告)号:US20210225739A1

    公开(公告)日:2021-07-22

    申请号:US16989017

    申请日:2020-08-10

    Abstract: A semiconductor device includes a substrate including a cell region and a connection region. The connection region includes a plurality of pad regions and a through electrode region. A horizontal conductive layer is on the substrate. A supporter is on the horizontal conductive layer. The supporter includes a first portion in the cell region, a second portion in the plurality of pad regions, and a third portion in the through electrode region. A connection conductive layer is between the first portion and the horizontal conductive layer. A connection mold layer is between the third portion and the horizontal conductive layer. A first buried insulation layer passing through the third portion, the connection mold layer, and the horizontal conductive layer is provided. A stacked structure is on the substrate. A through electrode passing through the first buried insulation layer is provided.

    DISPLAY APPARATUS
    7.
    发明申请

    公开(公告)号:US20210149193A1

    公开(公告)日:2021-05-20

    申请号:US17091591

    申请日:2020-11-06

    Abstract: A display apparatus includes a light source array in which a plurality of light sources emitting light by a local dimming are arranged, a color conversion layer comprising color conversion particles that convert the emitted light into light of a certain color, and configured to emit white light by using the converted light, a display panel configured to generate an image by using the white light, and a selective transmission member arranged between the light source array and the color conversion layer. The selective transmission member is configured to transmit the light to the color conversion layer, and avoid transmitting the light in the color conversion layer to the light source array.

    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

    公开(公告)号:US20210098478A1

    公开(公告)日:2021-04-01

    申请号:US16858983

    申请日:2020-04-27

    Abstract: Disclosed is a three-dimensional semiconductor memory device including a substrate including a cell array region and a connection region, a stack including first and second stacks sequentially stacked on the substrate, the stack having a staircase structure on the connection region, each of the first and second stacks including conductive patterns vertically stacked on the substrate, and contact plugs disposed on the connection region and respectively coupled to the conductive patterns. A bottom surface of each contact plug is located between top and bottom surfaces of a corresponding conductive pattern. In each stack, a recess depth of each contact plug varies monotonically in a stacking direction of the conductive patterns, when measured from a top surface of a corresponding conductive pattern. The contact plugs coupled to an uppermost conductive pattern of the first stack and a lowermost conductive pattern of the second stack have discrete recess depths.

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