Invention Application
- Patent Title: BIPOLAR TRANSISTOR AND MANUFACTURING METHOD
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Application No.: US17503621Application Date: 2021-10-18
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Publication No.: US20220122969A1Publication Date: 2022-04-21
- Inventor: Edoardo BREZZA , Alexis GAUTHIER
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Priority: FR2010686 20201019
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L29/737 ; H01L21/265 ; H01L21/225 ; H01L29/66 ; H01L21/8222
Abstract:
A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.
Public/Granted literature
- US11798937B2 Bipolar transistor and manufacturing method Public/Granted day:2023-10-24
Information query
IPC分类:
