A semiconductor device may include a pull-down transistor and a pull-up transistor disposed on a substrate. Each of the pull-down transistor and the pull-up transistor may include an active pattern disposed on the substrate; two source/drain patterns disposed on the active pattern; a channel pattern interposed between the two source/drain patterns, the channel pattern including semiconductor patterns that are disposed in a noncontiguous stack, such that a semiconductor pattern does not contact an adjacent semiconductor pattern; and a gate electrode crossing the channel pattern in a first direction. There may be more or less semiconductor patterns of the pull-down transistor as compared to semiconductor patterns of the pull-up transistor.