- 专利标题: BIAS CIRCUIT AND POWER AMPLIFIER CIRCUIT
-
申请号: US17421289申请日: 2019-08-29
-
公开(公告)号: US20220123697A1公开(公告)日: 2022-04-21
- 发明人: Christian ELGAARD , Henrik SJÖLAND
- 申请人: Telefonaktiebolaget LM Ericsson (publ)
- 申请人地址: SE Stockholm
- 专利权人: Telefonaktiebolaget LM Ericsson (publ)
- 当前专利权人: Telefonaktiebolaget LM Ericsson (publ)
- 当前专利权人地址: SE Stockholm
- 国际申请: PCT/EP2019/073046 WO 20190829
- 主分类号: H03F3/24
- IPC分类号: H03F3/24
摘要:
A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and the third transistors are biased by a first voltage.
公开/授权文献
- US11990875B2 Bias circuit and power amplifier circuit 公开/授权日:2024-05-21
信息查询
IPC分类: