- 专利标题： FAST READ SPEED MEMORY DEVICE
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申请号： US17571094申请日： 2022-01-07
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公开(公告)号： US20220130459A1公开(公告)日： 2022-04-28
- 发明人: Deepak Chandra SEKAR , Gary Bela BRONNER , Frederick A. WARE
- 申请人： HEFEI RELIANCE MEMORY LIMITED
- 申请人地址： CN Hefei
- 专利权人： HEFEI RELIANCE MEMORY LIMITED
- 当前专利权人： HEFEI RELIANCE MEMORY LIMITED
- 当前专利权人地址： CN Hefei
- 主分类号： G11C13/00
- IPC分类号： G11C13/00
摘要：
A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.