Invention Application
- Patent Title: REDISTRIBUTION STRUCTURE AND FORMING METHOD THEREOF
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Application No.: US17159012Application Date: 2021-01-26
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Publication No.: US20220130744A1Publication Date: 2022-04-28
- Inventor: Shu-Wei Kuo , Chen-Tsai Yang , Wei-Yuan Cheng , Chien-Hsun Chu , Shau-Fei Cheng
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW109137313 20201027
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L23/31 ; H01L21/48

Abstract:
Provided is a forming method of a redistribution structure including: forming a first redistribution layer and a first compensation circuit layer on a substrate, wherein the first compensation circuit layer surrounds the first redistribution layer, and the first compensation circuit layer and the first redistribution layer are electrically insulated from each other; forming a first dielectric layer on the first redistribution layer and the first compensation circuit layer; and forming a second redistribution layer and a second compensation circuit layer on the first dielectric layer, wherein the second compensation circuit layer surrounds the second redistribution layer, the second compensation circuit layer and the second redistribution layer are electrically insulated from each other, the second compensation circuit layer is connected to the first compensation circuit layer, and the second redistribution layer is connected to the first redistribution layer.
Public/Granted literature
- US11646259B2 Redistribution structure and forming method thereof Public/Granted day:2023-05-09
Information query
IPC分类: