Invention Application
- Patent Title: SEMICONDUCTOR DEVICE STRUCTURE WITH MAGNETIC ELEMENT
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Application No.: US17578757Application Date: 2022-01-19
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Publication No.: US20220140065A1Publication Date: 2022-05-05
- Inventor: Chi-Cheng CHEN , Wei-Li HUANG , Chien-Chih KUO , Hon-Lin HUANG , Chin-Yu KU , Chen-Shien CHEN
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01F41/04 ; H01L23/00 ; H01L21/768 ; H01L23/31 ; H01L23/532

Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an adhesive element between the magnetic element and the substrate. The adhesive element extends exceeding opposite edges of the magnetic element. The semiconductor device structure further includes an isolation element extending exceeding the opposite edges of the magnetic element. The isolation element partially covers a top surface of the magnetic element. In addition, the semiconductor device structure includes a conductive line over the isolation element.
Public/Granted literature
- US11749711B2 Semiconductor device structure with magnetic element Public/Granted day:2023-09-05
Information query
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