公开(公告)号：US20230154788A1

公开(公告)日：2023-05-18

申请号：US18154540

申请日：2023-01-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Li YANG ,  Wei-Li HUANG ,  Sheng-Pin YANG ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/04 ,  H01L23/522 ,  H01F41/04 ,  H01F17/00 ,  H01L23/532

CPC classification number: H01L21/76816 ,  H01L24/13 ,  H01L23/04 ,  H01L24/11 ,  H01L23/5226 ,  H01L21/76877 ,  H01L28/10 ,  H01L24/16 ,  H01F41/046 ,  H01F17/0033 ,  H01F17/0013 ,  H01L23/53295 ,  H01L2224/0401 ,  H01L2924/163 ,  H01F2017/004

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the end portion. The first protection cap and the first conductive line are made of different conductive materials, and the first protection cap exposes a peripheral region of a top surface of the end portion. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.

公开(公告)号：US20210376054A1

公开(公告)日：2021-12-02

申请号：US17402889

申请日：2021-08-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chun-Yi WU ,  Kuang-Yi WU ,  Hon-Lin HUANG ,  Chih-Hung SU ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

公开(公告)号：US20240363676A1

公开(公告)日：2024-10-31

申请号：US18767205

申请日：2024-07-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chun-Yi WU ,  Kuang-Yi WU ,  Hon-Lin HUANG ,  Chih-Hung SU ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01F41/04 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532

CPC classification number: H01L28/10 ,  H01F41/046 ,  H01L21/76823 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/53204 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

公开(公告)号：US20230361156A1

公开(公告)日：2023-11-09

申请号：US18353307

申请日：2023-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chien-Chih KUO ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H10B61/00 ,  H01L23/00 ,  H01F41/04 ,  H01L23/31 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L28/10 ,  H01L24/05 ,  H01L24/32 ,  H01F41/046 ,  H01L23/3114 ,  H01L23/53204 ,  H01L23/3171 ,  H01L21/76823 ,  H01L24/48 ,  H01L2224/04073 ,  H01L2224/04042 ,  H01L2224/05

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element partially covering the magnetic element. The semiconductor device structure further includes a conductive feature over the isolation element.

公开(公告)号：US20230238422A1

公开(公告)日：2023-07-27

申请号：US18193544

申请日：2023-03-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chun-Yi WU ,  Kuang-Yi WU ,  Hon-Lin HUANG ,  Chih-Hung SU ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L23/532 ,  H01F41/04 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L28/10 ,  H01F41/046 ,  H01L21/76823 ,  H01L23/3114 ,  H01L24/32 ,  H01L23/3171 ,  H01L24/05 ,  H01L23/53204 ,  H01L24/48 ,  H01L2224/05 ,  H01L2224/04042 ,  H01L2224/04073

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

公开(公告)号：US20220262892A1

公开(公告)日：2022-08-18

申请号：US17739487

申请日：2022-05-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chin-Yu KU ,  Chi-Cheng CHEN ,  Hon-Lin HUANG ,  Wei-Li HUANG ,  Chun-Yi WU ,  Chen-Shien CHEN

IPC: H01L49/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.

公开(公告)号：US20220140065A1

公开(公告)日：2022-05-05

申请号：US17578757

申请日：2022-01-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Cheng CHEN ,  Wei-Li HUANG ,  Chien-Chih KUO ,  Hon-Lin HUANG ,  Chin-Yu KU ,  Chen-Shien CHEN

IPC: H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an adhesive element between the magnetic element and the substrate. The adhesive element extends exceeding opposite edges of the magnetic element. The semiconductor device structure further includes an isolation element extending exceeding the opposite edges of the magnetic element. The isolation element partially covers a top surface of the magnetic element. In addition, the semiconductor device structure includes a conductive line over the isolation element.