Invention Application
- Patent Title: THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
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Application No.: US17459529Application Date: 2021-08-27
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Publication No.: US20220140147A1Publication Date: 2022-05-05
- Inventor: Dukhyun CHOE , Hyangsook LEE , Junghwa KIM , Eunha LEE , Sanghyun JO , Jinseong HEO
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0146371 20201104,KR10-2021-0035345 20210318
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/04 ; H01L29/51 ; H01L29/66 ; H01L29/786
Abstract:
A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.
Information query
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