Invention Application
- Patent Title: PHASE-CHANGE MEMORY
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Application No.: US17507645Application Date: 2021-10-21
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Publication No.: US20220140232A1Publication Date: 2022-05-05
- Inventor: Philippe BOIVIN , Roberto SIMOLA , Yohann MOUSTAPHA-RABAULT
- Applicant: STMicroelectronics (Crolles 2) SAS , STMICROELECTRONICS (ROUSSET) SAS
- Applicant Address: FR Crolles; FR Rousset
- Assignee: STMicroelectronics (Crolles 2) SAS,STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Crolles; FR Rousset
- Priority: FR2011087 20201029
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.
Public/Granted literature
- US12004432B2 Phase-change memory Public/Granted day:2024-06-04
Information query
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