- 专利标题: BULK ACOUSTIC WAVE RESONATOR
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申请号: US17220119申请日: 2021-04-01
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公开(公告)号: US20220140811A1公开(公告)日: 2022-05-05
- 发明人: Tae Kyung LEE , Dae Hun JEONG , Ran Hee SHIN , Jin Suk SON , Hwa Sun LEE , Jae Goon AUM
- 申请人: Samsung Electro-Mechanics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2020-0145365 20201103
- 主分类号: H03H9/17
- IPC分类号: H03H9/17 ; H03H9/02
摘要:
A bulk acoustic wave resonator is provided. The resonator includes a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a temperature compensation layer disposed at least one of above and below the piezoelectric layer, wherein a material of the temperature compensation layer has a coefficient of thermal expansion of which a sign is opposite to a sign of a coefficient of thermal expansion of a material of the piezoelectric layer, and wherein a relation of a thickness of the temperature compensation layer and a thickness of the piezoelectric layer satisfies the following equation: 0.25
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