公开(公告)号：US20230188114A1

公开(公告)日：2023-06-15

申请号：US17875503

申请日：2022-07-28

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sung Tae KIM ,  Kwang Su KIM ,  Jae Goon AUM

IPC: H03H9/56 ,  H03H9/205 ,  H03H9/02

CPC classification number: H03H9/566 ,  H03H9/205 ,  H03H9/02157

Abstract: A bulk acoustic resonator filter includes a plurality of bulk acoustic resonators connected between first and second radio frequency (RF) ports to form a frequency band, wherein each of the plurality of bulk acoustic resonators includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, the plurality of bulk acoustic resonators include first and second bulk acoustic resonators having different differences between a resonant frequency and an antiresonant frequency, and different ratios of a thickness of the piezoelectric layer to a total thickness of the first and second electrodes, and/or different thicknesses of the piezoelectric layer.

公开(公告)号：US20230008635A1

公开(公告)日：2023-01-12

申请号：US17554326

申请日：2021-12-17

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sung HAN ,  Jae Goon AUM

IPC: H03H9/10 ,  H03H9/17

Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other. The cap includes a central portion accommodating the acoustic resonator, and an outer portion disposed outside of the central portion and having a bonding surface. The outer portion includes protrusions in contact with the bonding portion, and at least one trench disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, the first protective layer and the second protective layer being disposed on a region of the bonding surface formed on each of the protrusions.

公开(公告)号：US20230087049A1

公开(公告)日：2023-03-23

申请号：US17689333

申请日：2022-03-08

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sang Heon HAN ,  Kwang Su KIM ,  Sung Joon PARK ,  Jae Goon AUM

IPC: H03H9/02 ,  H03H9/17

Abstract: A bulk acoustic resonator includes: a substrate; a protective layer; and a resonant portion including a piezoelectric layer, a first electrode disposed between the piezoelectric layer and the substrate, and a second electrode disposed between the piezoelectric layer and the protective layer. The protective layer covers a central portion of the resonant portion and a reflective portion surrounding the central portion and formed in a region in which an upper surface of the second electrode rises relative to the central portion. An upper surface of a portion of the protective layer covering the reflective portion is more gently inclined than the upper surface of a portion of the second electrode in the reflective portion.

公开(公告)号：US20230015405A1

公开(公告)日：2023-01-19

申请号：US17679472

申请日：2022-02-24

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sung Joon PARK ,  Kwang Su KIM ,  Jae Goon AUM ,  Sung HAN

IPC: H03H9/10 ,  H03H9/13

Abstract: A bulk acoustic resonator package is provided. The bulk acoustic resonator package includes a substrate; a cap; a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in a first direction in which the substrate and the cap face each other, and disposed between the substrate and the cap; and a cap melting member disposed to surround the resonance portion, and disposed to be in contact with a portion of a surface of the cap facing the substrate, when viewed in the first direction, and including a material or a structure that is based on a melting of the portion of the surface of the cap.

公开(公告)号：US20220407492A1

公开(公告)日：2022-12-22

申请号：US17495169

申请日：2021-10-06

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sang Heon HAN ,  Won HAN ,  Chang Hyun LIM ,  Sung Joon PARK ,  Jae Goon AUM

IPC: H03H9/02 ,  H01L41/047 ,  H01L41/08 ,  H03H9/48 ,  H03H9/13

Abstract: A bulk-acoustic wave (BAVV) resonator is provided. The BAW includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer disposed to cover at least a portion of the first electrode, and a second electrode disposed to cover at least a portion of the piezoelectric layer, wherein the piezoelectric layer includes an intermediate layer, a first layer disposed above the intermediate layer and a second layer disposed below the intermediate layer, the first layer and the second layer are symmetrical in relation to a plane through which a central line of the intermediate layer passes in a thickness direction, and a thickness of the intermediate layer is greater than a thickness of each of the first and second layers.

公开(公告)号：US20220067493A1

公开(公告)日：2022-03-03

申请号：US17148731

申请日：2021-01-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jae Goon AUM

IPC: G06N3/063 ,  G05B13/02

Abstract: A dongle-type module that supports artificial intelligence in an electronic device is provided. The dongle-type module includes an access channel configured to be connected to the electronic device; and a neural network processor, configured to receive first input information from the electronic device through the access channel, and generate, by a neural network calculation, output information based on the first input information.

公开(公告)号：US20210367582A1

公开(公告)日：2021-11-25

申请号：US17104703

申请日：2020-11-25

Applicant: Samsung Electro-Mechanics Co., Ltd

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Sang Kee YOON ,  Moon Chul LEE ,  Jae Goon AUM

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13 ,  H03H3/02 ,  H01L41/29 ,  H01L41/35

Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current density×scandium (Sc) content

公开(公告)号：US20240069310A1

公开(公告)日：2024-02-29

申请号：US18184962

申请日：2023-03-16

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Byung Ju KIM ,  Jung Ho LEE ,  Na Yi KANG ,  Joung Hun KIM ,  Jae Goon AUM

IPC: G02B13/00 ,  G02B1/18

CPC classification number: G02B13/0055 ,  G02B1/18 ,  G02B5/208 ,  G02B2207/101

Abstract: A lens includes a lens unit; an intermediate layer configured to cover a surface portion of the lens unit; and a water-repellent layer, configured to cover a surface portion of the intermediate layer, including a base layer and an ultraviolet (UV) absorber disposed in the base layer.

公开(公告)号：US20220399874A1

公开(公告)日：2022-12-15

申请号：US17511696

申请日：2021-10-27

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sang Heon HAN ,  Hwa Sun LEE ,  Jae Goon AUM ,  Sung HAN

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02 ,  H03H3/02

Abstract: An acoustic wave resonator package is provided. The acoustic wave resonator package includes an acoustic wave resonator including an acoustic wave generator on a first surface of a substrate; a cover disposed to face the first surface of the substrate; a bonding member disposed between the substrate and the cover, and configured to bond a bonding surface of the acoustic wave generator and the cover to each other, wherein the bonding member includes glass frit, and the bonding surface of the acoustic wave resonator which is bonded to the bonding member may be formed of a dielectric material.

公开(公告)号：US20220140811A1

公开(公告)日：2022-05-05

申请号：US17220119

申请日：2021-04-01

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Dae Hun JEONG ,  Ran Hee SHIN ,  Jin Suk SON ,  Hwa Sun LEE ,  Jae Goon AUM

IPC: H03H9/17 ,  H03H9/02

Abstract: A bulk acoustic wave resonator is provided. The resonator includes a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a temperature compensation layer disposed at least one of above and below the piezoelectric layer, wherein a material of the temperature compensation layer has a coefficient of thermal expansion of which a sign is opposite to a sign of a coefficient of thermal expansion of a material of the piezoelectric layer, and wherein a relation of a thickness of the temperature compensation layer and a thickness of the piezoelectric layer satisfies the following equation: 0.25