Invention Application
- Patent Title: SUBSTRATE HAVING THROUGH VIA AND METHOD OF FABRICATING THE SAME
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Application No.: US17134132Application Date: 2020-12-24
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Publication No.: US20220141961A1Publication Date: 2022-05-05
- Inventor: Chih-I Wu , Shih-Ming Lin , Pin-Hao Hu , Yu-Chung Lin , Hsin-Yu Chang , Fu-Lung Chou , Chien-Jung Huang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW109138203 20201103
- Main IPC: H05K3/00
- IPC: H05K3/00 ; H05K1/11

Abstract:
A method of fabricating a substrate having a through via includes: providing a carrier board having a release layer thereon; attaching the substrate onto the carrier board via the release layer; applying a light beam to the substrate to form a first blind hole in the substrate, wherein the first blind hole penetrates a first surface and a second surface of the substrate; performing an enlargement process on the first blind hole to form a second blind hole; forming a through via in the second blind hole; and performing a de-bonding process to release the substrate having a through via from the carrier board.
Public/Granted literature
- US11406022B2 Substrate having through via and method of fabricating the same Public/Granted day:2022-08-02
Information query