Invention Application
- Patent Title: NON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENTNON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENT
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Application No.: US17094819Application Date: 2020-11-11
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Publication No.: US20220149277A1Publication Date: 2022-05-12
- Inventor: JIANXUN SUN , JUAN BOON TAN , TUPEI CHEN
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
A memory device and method of making the same is provided. The memory device comprises a first electrode having a length along a first axis, a second electrode having a length along a second axis that is perpendicular to the first axis, and a switching layer adjacent to the first electrode. A portion of the switching layer is positioned between a first electrode edge and a second electrode portion. The cross-sections of the first and second electrodes may have a polygonal shape.
Public/Granted literature
- US11716914B2 Non-volatile memory device with filament confinement Public/Granted day:2023-08-01
Information query
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