NON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENTNON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENT
Abstract:
A memory device and method of making the same is provided. The memory device comprises a first electrode having a length along a first axis, a second electrode having a length along a second axis that is perpendicular to the first axis, and a switching layer adjacent to the first electrode. A portion of the switching layer is positioned between a first electrode edge and a second electrode portion. The cross-sections of the first and second electrodes may have a polygonal shape.
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