Invention Application
- Patent Title: VOLTAGE OFFSET BIN SELECTION BY DIE GROUP FOR MEMORY DEVICES
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Application No.: US17589491Application Date: 2022-01-31
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Publication No.: US20220157385A1Publication Date: 2022-05-19
- Inventor: Vamsi Pavan RAYAPROLU , Mustafa N. Kaynak , Michael Sheperek , Larry J. Koudele , Shane Nowell
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/08 ; G06F12/06
Abstract:
One or more data units at a memory device and that are associated with one or more dice of a die group comprising a plurality of dice are programmed. A voltage offset bin associated with the plurality of dice in the die group is determined based on a subset of dice of the die group.
Public/Granted literature
- US11837291B2 Voltage offset bin selection by die group for memory devices Public/Granted day:2023-12-05
Information query
