Invention Application
- Patent Title: FERROELECTRIC MEMORY DEVICE AND OPERATION METHOD THEREOF
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Application No.: US17591102Application Date: 2022-02-02
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Publication No.: US20220157833A1Publication Date: 2022-05-19
- Inventor: Masaharu KOBAYASHI , Fei MO , Toshiro HIRAMOTO
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi-shi
- Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: JP Kawaguchi-shi
- Priority: JP2019-146870 20190808
- Main IPC: H01L27/1159
- IPC: H01L27/1159 ; H01L27/11597 ; G11C11/22
Abstract:
A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.
Public/Granted literature
- US11765907B2 Ferroelectric memory device and operation method thereof Public/Granted day:2023-09-19
Information query
IPC分类:
