The disclosed subject matter relates generally to memory devices and a method of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including a first electrode having tapered sides and a top surface, in which the sides taper towards each other as they meet the top surface, a dielectric layer disposed on and conforming to the tapered sides of the first electrode, a resistive layer in contact with the top surface of the first electrode and the dielectric layer, and a second electrode disposed on the resistive layer.