Invention Application
- Patent Title: APPARATUS AND METHOD FABRICATING SEMICONDUCTOR DEVICE
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Application No.: US17380806Application Date: 2021-07-20
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Publication No.: US20220165552A1Publication Date: 2022-05-26
- Inventor: NAM KYUN KIM , TAE-SUN SHIN , DEOKJIN KWON , DONGHYEON NA , SEUNGBO SHIM , SUNGYONG LIM , MINJOON KIM , JIN YOUNG BANG , BONGJU LEE , JINSEOK LEE , SUNGIL CHO , CHUNGHO CHO
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR10-2020-0158799 20201124
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/26 ; H01L21/683

Abstract:
A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.
Public/Granted literature
- US12014905B2 Apparatus and method fabricating semiconductor device Public/Granted day:2024-06-18
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