公开(公告)号：US20220139669A1

公开(公告)日：2022-05-05

申请号：US17242019

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONG CHUNG ,  NAM KYUN KIM ,  NAOHIKO OKUNISHI ,  KYUNG-SUN KIM ,  SEUNG BO SHIM ,  SANG-HO LEE ,  KANG MIN JEON

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

公开(公告)号：US20250104969A1

公开(公告)日：2025-03-27

申请号：US18640332

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN BAE KIM ,  JUHO LEE ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  NAM KYUN KIM ,  DONGHYEON NA ,  SANG KI NAM ,  HYUNJAE LEE ,  HYUNHAK JEONG

IPC: H01J37/32

Abstract: A substrate processing method including: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying bias power to the substrate processing apparatus, wherein applying the source power to the substrate processing apparatus includes: providing the substrate processing apparatus with a first radio-frequency (RF) power with a first pulse having a first period; and providing the substrate processing apparatus with a second RF power with a second pulse having a second period, wherein the first period is longer than the second period.

公开(公告)号：US20220165552A1

公开(公告)日：2022-05-26

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAM KYUN KIM ,  TAE-SUN SHIN ,  DEOKJIN KWON ,  DONGHYEON NA ,  SEUNGBO SHIM ,  SUNGYONG LIM ,  MINJOON KIM ,  JIN YOUNG BANG ,  BONGJU LEE ,  JINSEOK LEE ,  SUNGIL CHO ,  CHUNGHO CHO

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.