Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
-
Application No.: US17517920Application Date: 2021-11-03
-
Publication No.: US20220165727A1Publication Date: 2022-05-26
- Inventor: Ryota KURODA , Hitoshi MATSUURA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2020-193696 20201120
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02 ; H01L29/739 ; H01L29/66
Abstract:
A built-in resistor electrically connecting a trench gate electrode and a gate pad is formed of a conductive film formed on a semiconductor substrate via an insulating film. Here, a film thickness of the insulating film is larger than a film thickness of an insulating film in a trench and is smaller than an insulating film which is a field oxide film.
Information query
IPC分类:
