- 专利标题： METHOD FOR PRODUCING A CONNNECTION STRUCTURE AND SEMICONDUCTOR DEVICE
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申请号： US17442624申请日： 2020-03-20
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公开(公告)号： US20220172960A1公开(公告)日： 2022-06-02
- 发明人: Andreas RUDOLPH , Teresa BAUR , Christoph KLEMP
- 申请人： OSRAM Opto Semiconductors GmbH
- 申请人地址： DE Regensburg
- 专利权人： OSRAM Opto Semiconductors GmbH
- 当前专利权人： OSRAM Opto Semiconductors GmbH
- 当前专利权人地址： DE Regensburg
- 优先权： DE102019107760.5 20190326
- 国际申请： PCT/EP2020/057784 WO 20200320
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H01L23/538 ; H01L21/768
摘要：
A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.
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