公开(公告)号：US20220172960A1

公开(公告)日：2022-06-02

申请号：US17442624

申请日：2020-03-20

申请人： OSRAM Opto Semiconductors GmbH

发明人： Andreas RUDOLPH ,  Teresa BAUR ,  Christoph KLEMP

IPC分类号： H01L21/48 ,  H01L23/538 ,  H01L21/768

摘要： A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.