Invention Application
- Patent Title: MOS CAPACITOR AND FABRICATION METHOD THEREOF
-
Application No.: US17145416Application Date: 2021-01-11
-
Publication No.: US20220181505A1Publication Date: 2022-06-09
- Inventor: Jian-Li Lin , Wei-Da Lin , Cheng-Guo Chen , Ta-Kang Lo , Yi-Chuan Chen , Huan-Chi Ma , Chien-Wen Yu , Kuan-Ting Lu , Kuo-Yu Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu City
- Priority: CN202011429361.X 20201207
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/66
Abstract:
A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.
Information query
IPC分类:
