Invention Application
- Patent Title: HIGH FREQUENCY DEVICES INCLUDING ATTENUATING DIELECTRIC MATERIALS
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Application No.: US17454120Application Date: 2021-11-09
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Publication No.: US20220189892A1Publication Date: 2022-06-16
- Inventor: Pietro BRENNER , Walter HARTNER , Julian Winfried KAISER , Saqib KALEEM
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102020133756.6 20201216
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/31 ; H01L23/552 ; H01L25/065
Abstract:
A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric material is more than 5 dB/cm at least in a subrange of the first frequency range.
Information query
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