公开(公告)号：US20240290733A1

公开(公告)日：2024-08-29

申请号：US18440561

申请日：2024-02-13

Applicant: Infineon Technologies AG

Inventor： Simon KORNPROBST ,  Tuncay ERDÖL ,  Walter HARTNER

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/552

CPC classification number: H01L23/66 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/552 ,  H01L2223/6605

Abstract: A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.

公开(公告)号：US20220247089A1

公开(公告)日：2022-08-04

申请号：US17648730

申请日：2022-01-24

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Tuncay ERDOEL ,  Klaus ELIAN ,  Christian GEISSLER ,  Bernhard RIEDER ,  Rainer Markus SCHALLER ,  Horst THEUSS ,  Maciej WOJNOWSKI

IPC: H01Q21/00 ,  H01Q1/52 ,  H01Q1/38 ,  H01Q1/16

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.

公开(公告)号：US20250016918A1

公开(公告)日：2025-01-09

申请号：US18751647

申请日：2024-06-24

Applicant: Infineon Technologies AG

Inventor： Martin Richard NIEßNER ,  Walter HARTNER ,  Gerhard HAUBNER

IPC: H05K1/03 ,  H05K1/18 ,  H05K3/30

Abstract: A printed circuit board for mounting at least one semiconductor chip device includes a metal structure provided in a first area of the printed circuit board for soldering the semiconductor chip device onto the metal structure. The printed circuit board includes a main surface, a layer stack including a first layer extending parallel to the main surface and a second layer extending parallel to the main surface. The first layer includes a first material having a first coefficient of thermal expansion in a lateral direction and the second layer includes a second material having a second coefficient of thermal expansion in the lateral direction such that the printed circuit board is forced by the layer stack into a curved shape at least in the first area of the printed circuit board.

公开(公告)号：US20240429177A1

公开(公告)日：2024-12-26

申请号：US18743398

申请日：2024-06-14

Applicant: Infineon Technologies AG

Inventor： Simon KORNPROBST ,  Tuncay ERDÖL ,  Walter HARTNER

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/367 ,  H01L23/66

Abstract: According to an example of the implementation, a radio frequency (RF) semiconductor device to process RF signals in an operating frequency range including a semiconductor chip including a first surface, a second surface, sidewalls and an active chip region. The first surface and second surface extend along a lateral direction and the sidewalls extend along a vertical direction. A metal layer external to the active chip region faces the second surface of the semiconductor chip. The metal layer has a thickness that is below a skin depth corresponding to the operating frequency range.

公开(公告)号：US20190221533A1

公开(公告)日：2019-07-18

申请号：US16246912

申请日：2019-01-14

Applicant: Infineon Technologies AG

Inventor： Horst THEUSS ,  Rudolf BERGER ,  Walter HARTNER ,  Veronika HUBER ,  Werner ROBL

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L24/05 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2924/3512

Abstract: A semiconductor device includes a semiconductor chip, an electrical connection element for electrically connecting the semiconductor device to a carrier, and a metallization adjoining the electrical connection element, the metallization contains porous nanocrystalline copper that contains portions of organic acids.

公开(公告)号：US20240196757A1

公开(公告)日：2024-06-13

申请号：US18526239

申请日：2023-12-01

Applicant: Infineon Technologies AG

Inventor： Horst THEUSS ,  Christian GEISSLER ,  Rainer Markus SCHALLER ,  Walter HARTNER

IPC: H10N50/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC classification number: H10N50/10 ,  H01L21/561 ,  H01L23/3157 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/96

Abstract: A fan-out wafer-level package contains a magnetic field sensor chip and an encapsulation material which at least partially encapsulates the magnetic field sensor chip. Further, the fan-out wafer-level package contains an external electrical contact element formed by a planar solderable metal coating, and an electrical redistribution layer arranged over the encapsulation material and electrically interconnecting the magnetic field sensor chip and the external electrical contact element.

公开(公告)号：US20220059918A1

公开(公告)日：2022-02-24

申请号：US17444864

申请日：2021-08-11

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Bernhard RIEDER

IPC: H01P3/12 ,  H01Q1/50 ,  H05K1/02

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package, which is mounted on the printed circuit board at a first mounting point and has a radio-frequency chip and a radio-frequency radiation element, wherein the printed circuit board has a first elasticity at least in a first section comprising the first mounting point. The radio-frequency device further comprises a waveguide component, which is mounted on the printed circuit board at a second mounting point and has a waveguide, wherein the radio-frequency radiation element is configured to radiate signals into the waveguide and/or to receive signals by way of the waveguide. The printed circuit board has a second elasticity at least in a second section with an increased elasticity between the first mounting point and the second mounting point, wherein the second elasticity is higher than the first elasticity.

公开(公告)号：US20190198455A1

公开(公告)日：2019-06-27

申请号：US16227427

申请日：2018-12-20

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Christian GEISSLER ,  Thomas KILGER ,  Johannes LODERMEYER ,  Franz-Xaver MUEHLBAUER ,  Martin Richard NIESSNER ,  Claus WAECHTER

IPC: H01L23/00 ,  H01L23/66 ,  H01L23/31 ,  H01L21/56 ,  H01Q1/22

CPC classification number: H01L23/562 ,  H01L21/563 ,  H01L23/3157 ,  H01L23/66 ,  H01L2223/6677 ,  H01Q1/2283

Abstract: A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.

公开(公告)号：US20240393433A1

公开(公告)日：2024-11-28

申请号：US18669157

申请日：2024-05-20

Applicant: Infineon Technologies AG

Inventor： Klaus ELIAN ,  Walter HARTNER ,  Horst THEUSS ,  Christian GEIßLER ,  Rainer Markus SCHALLER

IPC: G01S7/41

Abstract: A method for authenticating an object includes positioning a millimeter-wave transceiver relative to an object which contains a metamaterial marking. A transmit signal is transmitted from the millimeter-wave transceiver in the direction of the metamaterial marking, wherein the transmit signal is converted based on the metamaterial marking into a receive signal which has a first characteristic and is emitted in the direction of the millimeter-wave transceiver. The receive signal is received and processed by the millimeter-wave transceiver in order to capture the first characteristic. First comparison information is generated based on the first characteristic and an authentication of the object is carried out based on the first comparison information.

公开(公告)号：US20220415830A1

公开(公告)日：2022-12-29

申请号：US17356831

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Tuncay ERDOEL ,  Walter HARTNER ,  Ulrich MOELLER ,  Bernhard RIEDER ,  Ernst SELER ,  Maciej WOJNOWSKI

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/498 ,  H01P3/12 ,  H01Q1/22

Abstract: A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.