Invention Application
- Patent Title: ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE
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Application No.: US17539474Application Date: 2021-12-01
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Publication No.: US20220196911A1Publication Date: 2022-06-23
- Inventor: Paveen Apiratikul , Damien Lambert
- Applicant: Skorpios Technologies, Inc.
- Applicant Address: US NM Albuquerque
- Assignee: Skorpios Technologies, Inc.
- Current Assignee: Skorpios Technologies, Inc.
- Current Assignee Address: US NM Albuquerque
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/136

Abstract:
An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.
Public/Granted literature
- US11624872B2 Etched facet in a multi quantum well structure Public/Granted day:2023-04-11
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