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    HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION
    3.
    发明申请
    HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION 有权

    公开(公告)号：US20230124445A1

    公开(公告)日：2023-04-20

    申请号：US17949022

    申请日：2022-09-20

    申请人： Skorpios Technologies., Inc.

    发明人： Stephen B. Krasulick ,  John Dallesasse

    IPC分类号： H01L25/16 ,  H01L25/075 ,  H01L25/00

    摘要： A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

    Diffusion blocking layer for a compound semiconductor structure
    4.
    发明授权
    Diffusion blocking layer for a compound semiconductor structure 有权

    公开(公告)号：US11557880B2

    公开(公告)日：2023-01-17

    申请号：US17061305

    申请日：2020-10-01

    申请人： Skorpios Technologies, Inc.

    发明人： John Y. Spann ,  John Zyskind

    IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/343 ,  H01S5/323

    摘要： A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE
    5.
    发明申请
    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE 有权

    公开(公告)号：US20220196911A1

    公开(公告)日：2022-06-23

    申请号：US17539474

    申请日：2021-12-01

    申请人： Skorpios Technologies, Inc.

    发明人： Paveen Apiratikul ,  Damien Lambert

    IPC分类号： G02B6/12 ,  G02B6/136

    摘要： An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.