The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.