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公开(公告)号：US20190319162A1
公开(公告)日：2019-10-17
申请号：US16452015
申请日：2019-06-25
IPC分类号： H01L33/00 , H01L33/26 , H01L33/62 , H01L21/67 , H01L21/687 , H01S5/22 , H01S5/40 , H01S5/10 , H01S5/32
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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公开(公告)号：US20170330757A1
公开(公告)日：2017-11-16
申请号：US15594482
申请日：2017-05-12
发明人： Christoph EICHLER , Andre SOMERS , Harald KOENIG , Bernhard STOJETZ , Andreas LOEFFLER , Alfred LELL
IPC分类号： H01L21/268 , H01L21/324 , H01L21/3105
CPC分类号： H01L27/1285 , H01L21/02104 , H01L21/02293 , H01L21/02365 , H01L21/0254 , H01L21/02617 , H01L21/02636 , H01L21/02647 , H01L21/20 , H01L21/2022 , H01L21/268 , H01L21/3105 , H01L21/3247 , H01L21/76248 , H01L21/76272 , H01L27/1281 , H01L33/007 , H01L33/025 , H01L33/08 , H01L33/12 , H01L2933/0016 , H01S5/2068 , H01S5/2077 , H01S5/222 , H01S5/223 , H01S2304/00
摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US20220200241A1
公开(公告)日：2022-06-23
申请号：US17441868
申请日：2020-03-11
发明人： Sven GERHARD , Bernhard STOJETZ
摘要： The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.
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公开(公告)号：US20220128662A1
公开(公告)日：2022-04-28
申请号：US17438727
申请日：2020-03-13
发明人： Bernhard STOJETZ , Harald KOENIG , Alfred LELL , Muhammad ALI
摘要： The invention relates to a device and a method for projecting a plurality of radiation points onto an object surface, comprising at least one radiation source for emitting electromagnetic radiation, comprising at least one beam path, via which the radiation emitted at least temporarily by the emitters is deflected in the direction of the object surface, and comprising a controller which, in order to change at least one property of the emitted radiation, controls the radiation source according to a light object to be generated on the object surface. The controller is designed in such a way that at least two of the plurality of emitters of the radiation source are each individually controlled in order to change at least one property of the emitted radiation according to the light object to be generated, and at least one optical element for shaping, directing and/or converting the electromagnetic radiation is arranged in the beam path.
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公开(公告)号：US20190355768A1
公开(公告)日：2019-11-21
申请号：US16528307
申请日：2019-07-31
发明人： Christoph EICHLER , Andre SOMERS , Harald KOENIG , Bernhard STOJETZ , Andreas LOEFFLER , Alfred LELL
IPC分类号： H01L27/12 , H01L21/762 , H01L21/268 , H01L21/20 , H01L21/02 , H01L21/3105 , H01L21/324 , H01S5/22 , H01L33/00 , H01L33/02
摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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6.发明申请公开(公告)号：US20170331257A1
公开(公告)日：2017-11-16
申请号：US15594397
申请日：2017-05-12
CPC分类号： H01S5/4087 , H01L21/02458 , H01L21/0254 , H01L21/02617 , H01L27/153 , H01L33/0025 , H01L33/0075 , H01L33/0095 , H01L33/32 , H01L33/325 , H01S5/026 , H01S5/1053 , H01S5/1096 , H01S5/22 , H01S5/3013 , H01S5/32341 , H01S2304/00
摘要： A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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公开(公告)号：US20170330996A1
公开(公告)日：2017-11-16
申请号：US15594519
申请日：2017-05-12
CPC分类号： H01L33/0025 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/26 , H01L33/32 , H01L33/62 , H01S5/026 , H01S5/1082 , H01S5/2036 , H01S5/2219 , H01S5/222 , H01S5/227 , H01S5/3205 , H01S5/32341 , H01S5/4031 , H01S2301/176 , H01S2301/18
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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