Invention Application
- Patent Title: PLASMA INDUCED MODIFICATION OF SILICON CARBIDE SURFACE
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Application No.: US17139211Application Date: 2020-12-31
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Publication No.: US20220205095A1Publication Date: 2022-06-30
- Inventor: Francis Kanyiri Mungai , Vijayabhaskara Venkatagiriyappa , Yung-Cheng Hsu , Keiichi Tanaka , Mario D. Silvetti , Mihaela A. Balseanu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/32 ; C23C16/458 ; H01L21/687
Abstract:
Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.
Public/Granted literature
- US11692267B2 Plasma induced modification of silicon carbide surface Public/Granted day:2023-07-04
Information query
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