公开(公告)号：US20220205095A1

公开(公告)日：2022-06-30

申请号：US17139211

申请日：2020-12-31

Applicant: Applied Materials, Inc.

Inventor： Francis Kanyiri Mungai ,  Vijayabhaskara Venkatagiriyappa ,  Yung-Cheng Hsu ,  Keiichi Tanaka ,  Mario D. Silvetti ,  Mihaela A. Balseanu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/458 ,  H01L21/687

Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.

公开(公告)号：US11692267B2

公开(公告)日：2023-07-04

申请号：US17139211

申请日：2020-12-31

Applicant: Applied Materials, Inc.

Inventor： Francis Kanyiri Mungai ,  Vijayabhaskara Venkatagiriyappa ,  Yung-Cheng Hsu ,  Keiichi Tanaka ,  Mario D. Silvetti ,  Mihaela A. Balseanu

IPC: C23C16/32 ,  C23C16/455 ,  H01L21/687 ,  C23C16/458

CPC classification number: C23C16/45536 ,  C23C16/325 ,  C23C16/4582 ,  C23C16/45544 ,  H01L21/68757

Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.