- 专利标题: METHOD OF PREDICTING SEMICONDUCTOR MATERIAL PROPERTIES AND METHOD OF TESTING SEMICONDUCTOR DEVICE USING THE SAME
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申请号: US17468819申请日: 2021-09-08
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公开(公告)号: US20220207393A1公开(公告)日: 2022-06-30
- 发明人: Naoto Umezawa , Changwook Jeong , Jisu Ryu , Kyu Hyun Lee , Jinyoung Lim , Wonik Jang , In Huh
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2020-0187266 20201230
- 主分类号: G06N5/04
- IPC分类号: G06N5/04 ; G06N5/02
摘要:
Disclosed are methods of predicting semiconductor material properties and methods of testing semiconductor devices using the same. The prediction method comprises preparing a machine learning model that is trained with a training system and using the machine learning model to predict material properties of a target system. The machine learning model is represented as a function of material properties with respect to a descriptor. The descriptor is calculated from unrelaxed charge density (UCD) that is represented by summation of atomic charge density (ACD) of single atoms.
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