Invention Application
- Patent Title: METHOD OF PLASMA PROCESSING A SUBSTRATE IN A PLASMA CHAMBER AND PLASMA PROCESSING SYSTEM
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Application No.: US17697965Application Date: 2022-03-18
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Publication No.: US20220208532A1Publication Date: 2022-06-30
- Inventor: Wojciech Gajewski , Krzysztof Ruda , Jakub Swiatnicki
- Applicant: TRUMPF Huettinger Sp. z o. o.
- Applicant Address: PL Zielonka
- Assignee: TRUMPF Huettinger Sp. z o. o.
- Current Assignee: TRUMPF Huettinger Sp. z o. o.
- Current Assignee Address: PL Zielonka
- Priority: EP19461583.7 20190923
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/34

Abstract:
A method of plasma processing a substrate in a plasma chamber is provided. The method includes the steps of supplying a power supply signal to electrodes arranged within the plasma chamber in order to form a plasma in the plasma chamber, monitoring at least one parameter related to the plasma processing, determining a feature related to the at least one monitored parameter, and adjusting the power supply signal during the plasma processing to modify, in particular reduce, the feature. The modification of the feature eliminates or mitigates formation of crazing on the substrate.
Public/Granted literature
- US12148601B2 Method of plasma processing a substrate in a plasma chamber and plasma processing system Public/Granted day:2024-11-19
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