Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17694035Application Date: 2022-03-14
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Publication No.: US20220208706A1Publication Date: 2022-06-30
- Inventor: Joohee JANG , Seokho KIM , Hoonjoo NA , Jaehyung PARK , Kyuha LEE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0104505 20190826
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L27/146

Abstract:
A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.
Public/Granted literature
- US11616036B2 Semiconductor device and method of manufacturing the same Public/Granted day:2023-03-28
Information query
IPC分类: