CUTLERY BASKET AND DISHWASHER COMPRISING SAME

    公开(公告)号:US20240341564A1

    公开(公告)日:2024-10-17

    申请号:US18750989

    申请日:2024-06-21

    Inventor: Jusik KIM Kyuha LEE

    CPC classification number: A47L15/502

    Abstract: A dishwasher is disclosed. The dishwasher comprises: a cabinet; a washing tub provided inside the cabinet; and a cutlery basket inside the washing tub and including a first sidewall, a second side wall opposite to the first sidewall, a main body including first holes formed in the first and second sidewalls and second holes spaced apart from the first holes at right angles, and a handle including a first fastener facing the outer surface of the first side wall, a second fastener facing the outer surface of the second sidewall, and a grip connecting the first and second fasteners, first and second protrusions formed on each of the first and second fasteners and the first protrusions inserted into the first holes and have an upper surface contacting the main body, and the second protrusions are inserted into the second holes and have a lower surface contacting the main body.

    SEMICONDUCTOR DEVICES
    2.
    发明申请

    公开(公告)号:US20210343669A1

    公开(公告)日:2021-11-04

    申请号:US17158450

    申请日:2021-01-26

    Abstract: A semiconductor device includes a first structure including a first bonding structure, and a second structure on the first structure and including a second bonding structure connected to the first bonding structure. The first bonding structure includes a first insulating layer, a first bonding insulating layer on the first insulating layer, first bonding pads penetrating at least a portion of the first insulating layer and the first bonding insulating layer, and first metal patterns in the first insulating layer and in contact with the first bonding insulating layer, and having an upper surface at a lower level than upper surfaces of the first bonding pads. The second bonding structure includes a second bonding insulating layer bonded to the first bonding insulating layer, a second insulating layer on the second bonding insulating layer, and second bonding pads penetrating the second bonding insulating layer and connected to the first bonding pads.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250038141A1

    公开(公告)日:2025-01-30

    申请号:US18916136

    申请日:2024-10-15

    Abstract: A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.

    DISHWASHER
    4.
    发明申请
    DISHWASHER 审中-公开

    公开(公告)号:US20200337519A1

    公开(公告)日:2020-10-29

    申请号:US16858249

    申请日:2020-04-24

    Abstract: A dishwasher includes a main body, a tub provided inside the main body and configured to form a washing chamber, a machine room formed under the tub, a drain hose configured to discharge washing water stored in the washing chamber, and a hose fixer disposed on a side surface of the tub and configured to fix at least a part of the drain hose, and the drain hose further includes a first coupler coupled to one side of the machine room and a second coupler coupled to the hose fixer, and the first coupler includes an insertion part provided to extend in a longitudinal direction of the first coupler to be inserted to the one side of the machine room to couple the first coupler to the one side of the machine room.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

    公开(公告)号:US20240274593A1

    公开(公告)日:2024-08-15

    申请号:US18414750

    申请日:2024-01-17

    CPC classification number: H01L27/0207 H01L23/13 H01L23/585 H01L2027/11875

    Abstract: A semiconductor device includes a first substrate structure and a second substrate structure stacked on the first substrate structure. The first substrate structure includes a plurality of first bonding pads in a first die region of a first substrate, a first passivation layer on the first substrate and exposing the first bonding pads, and a plurality of first dummy patterns in the first passivation layer in a first scribe region. The second substrate structure includes a plurality of second bonding pads in a second die region of a second substrate, a second passivation layer on the second substrate and exposing the second bonding pads, and a plurality of second dummy patterns in the second passivation layer in a second scribe region. The first bonding pad and the second bonding pad are directly bonded to each other.

    DISHWASHER
    7.
    发明公开
    DISHWASHER 审中-公开

    公开(公告)号:US20230180993A1

    公开(公告)日:2023-06-15

    申请号:US18076708

    申请日:2022-12-07

    CPC classification number: A47L15/486 A47L15/4287 A47L15/507

    Abstract: A dishwasher includes: a tub including a washing room; and a dryer installed on one side of the tub, the dryer including: a first housing coupled with the tub and communicating with the washing room; a second housing coupled with an other side of the first housing, and forming a flow path together with the first housing so that inside air of the washing room circulates back to the washing room by passing through the flow path; a heater accommodated inside the first housing and the second housing to heat the air passing through the flow path; and a switch module positioned upstream of the heater, configured to detect an inside temperature of the flow path to turn on or off the heater based on the detected inside temperature, and fixed between the first housing and the second housing by coupling of the first housing with the second housing.

    SEMICONDUCTOR PACKAGE
    8.
    发明申请

    公开(公告)号:US20230005853A1

    公开(公告)日:2023-01-05

    申请号:US17674974

    申请日:2022-02-18

    Abstract: A semiconductor package includes a first structure having a first insulating layer and a first bonding pad penetrating the first insulating layer, and a second structure on the first structure and having a second insulating layer bonded to the first insulating layer, a bonding pad structure penetrating the second insulating layer and bonded to the first bonding pad, and a test pad structure penetrating the second insulating layer and including a test pad in an opening penetrating the second insulating layer and having a protrusion with a flat surface, and a bonding layer filling the opening and covering the test pad and the flat surface, the protrusion of the test pad extending from a surface in contact with the bonding layer, and the flat surface of the protrusion being within the opening and spaced apart from an interface between the bonding layer and the first insulating layer.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220208706A1

    公开(公告)日:2022-06-30

    申请号:US17694035

    申请日:2022-03-14

    Abstract: A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.

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