Invention Application
- Patent Title: GROUP III NITRIDE DEVICE HAVING AN OHMIC CONTACT
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Application No.: US17695366Application Date: 2022-03-15
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Publication No.: US20220208972A1Publication Date: 2022-06-30
- Inventor: Albert Birner , Jan Ropohl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: EP18208960.7 20181128
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/283 ; H01L29/40 ; H01L29/45

Abstract:
In an embodiment, a Group III nitride device includes a multilayer Group III nitride structure and a first ohmic contact arranged on and forming an ohmic contact to the multilayer Group III nitride device structure. The first ohmic contact includes a base portion having a conductive surface, the conductive surface including a peripheral portion and a central portion, the peripheral portion and the central portion being substantially coplanar and being of differing composition, a conductive via positioned on the central portion of the conductive surface and a contact pad positioned on the conductive via.
Public/Granted literature
- US11728389B2 Group III nitride device having an ohmic contact Public/Granted day:2023-08-15
Information query
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