Estimation of read parameters for a read channel of a solid-state storage device using a machine learning apparatus. The machine learning apparatus may be provided with signal count metrics from multiple regions of the memory cell signal space and syndrome weights from an error correction code. Other inputs may also be provided comprising metrics of the memory or read operations. In an example, the read parameters may include one or more reference threshold voltage values for read voltages applied to a memory cell and/or log-likelihood ratio (LLR) values for the memory cell.