A semiconductor device includes a first insulating layer on a semiconductor substrate. A first conductive film is on the first insulating layer. A first stacked structure is on the first conductive film and includes first electrode films and second insulating layers alternately stacked. A conductive member is along an outer edge of the first stacked structure around the first stacked structure and electrically connected to the semiconductor substrate. A second stacked structure is provided at least partially around the conductive member and includes the second insulating layers and third insulating layers alternately stacked on the first conductive film. The first conductive film includes a body part below the first stacked structure, a periphery part provided at a periphery of the body part away from the body part, and a slit part in the first conductive film between the conductive member and the second stacked structure in the periphery part.