Invention Application
- Patent Title: RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICE AND FORMING METHOD THEREOF
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Application No.: US17196979Application Date: 2021-03-09
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Publication No.: US20220246845A1Publication Date: 2022-08-04
- Inventor: Chia-Ching Hsu , Wang Xiang , Shen-De Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: TW110103697 20210201
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A RRAM (resistive random-access memory) device includes a bottom electrode line, a top electrode island and a resistive material. The bottom electrode line is directly on a first metal structure. The top electrode island is disposed beside the bottom electrode line. The resistive material is sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island. The present invention also provides a method of forming said RRAM device.
Public/Granted literature
- US12010931B2 Resistive random-access memory (RRAM) device and forming method thereof Public/Granted day:2024-06-11
Information query
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