Invention Application
- Patent Title: PROGRAMMING ANALOG NEURAL MEMORY CELLS IN DEEP LEARNING ARTIFICIAL NEURAL NETWORK
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Application No.: US17734807Application Date: 2022-05-02
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Publication No.: US20220254414A1Publication Date: 2022-08-11
- Inventor: Hieu Van Tran , Thuan Vu , Stanley Hong , Anh Ly , Vipin Tiwari , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06N3/08 ; H01L27/11521 ; H01L29/788

Abstract:
Numerous embodiments are disclosed for a high voltage generation algorithm and system for generating high voltages necessary for a particular programming operation in analog neural memory used in a deep learning artificial neural network. In one example, a method for programming a plurality of non-volatile memory cells in an array of non-volatile memory cells, comprises generating a high voltage, and programming a plurality of non-volatile memory cells in an array using the high voltage when a programming enable signal is asserted and providing a feedback loop to maintain the high voltage while programming the plurality of non-volatile memory cells.
Public/Granted literature
- US11727989B2 Programming analog neural memory cells in deep learning artificial neural network Public/Granted day:2023-08-15
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