Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.