公开(公告)号：US20230124414A1

公开(公告)日：2023-04-20

申请号：US17696447

申请日：2022-03-16

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Ria Someshwar

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/18

Abstract: Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a layer of a metal nitride overlying the silicon-containing substrate. The layer of the metal nitride may include a plurality of features. The structures may include a gallium nitride structure overlying the layer of the metal nitride.

公开(公告)号：US20230361242A1

公开(公告)日：2023-11-09

申请号：US17736843

申请日：2022-05-04

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Archana Kumar ,  Jeffrey W. Anthis ,  Ryan Ley ,  Alfredo Granados

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L33/0075

Abstract: A mesa etch may form the geometry of microLED structures. However, the mesa etch may induce defects in the microLED structures that decreases the efficiency of the microLEDs. To correct these defects, a dry etch process may be performed that incrementally removes the surface layers of the microLED structures with the defects. The dry etch may be configured to incrementally remove a small outer layer, and thus may preserve the overall shape of the microLED structures while leaving a smooth surface for the application of a dielectric layer. The dry etch process may include two steps that are repeatedly performed. A first gas may react with the surface to form a gallium compound layer, and a second gas may then selectively remove that layer. The dry etch may include plasma-based etches or reactive thermal etches.

公开(公告)号：US20230115980A1

公开(公告)日：2023-04-13

申请号：US17498373

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Ria Someshwar

IPC: H01L33/00 ,  H01L33/32

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include a nitrogen-containing nucleation layer deposited on the substrate. The methods may include forming a silicon-containing material on at least a first portion of the nitrogen-containing nucleation layer. The methods may include forming a second layer of material on at least a second portion of the nitrogen-containing nucleation layer. The methods may include forming a masking layer on a portion of the second layer of material. The masking layer may cover less than or about 90% of the second layer of material. The methods may include growing the second layer of material through the masking layer. The methods may include coalescing the second layer of material above the masking layer.

公开(公告)号：US20240247407A1

公开(公告)日：2024-07-25

申请号：US18586297

申请日：2024-02-23

Applicant: Applied Materials, Inc.

Inventor： Michael Chudzik ,  Max Batres ,  Michel Khoury

IPC: C30B29/40 ,  C30B25/02 ,  C30B33/08 ,  H01L21/02 ,  H01L33/00

CPC classification number: C30B29/406 ,  C30B33/08 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/0075 ,  C30B25/02

Abstract: Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.

公开(公告)号：US11837683B2

公开(公告)日：2023-12-05

申请号：US17197493

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Michael Chudzik ,  Michel Khoury ,  Max Batres

IPC: H01L33/32 ,  H01L33/16 ,  H01L33/08 ,  H01L33/10 ,  H01L33/18 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/10 ,  H01L33/16 ,  H01L33/18

Abstract: Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.

公开(公告)号：US20220285584A1

公开(公告)日：2022-09-08

申请号：US17195271

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Lan Yu ,  Michael Chudzik ,  Max Batres

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/46 ,  H01L33/58

Abstract: Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.

公开(公告)号：US20220259766A1

公开(公告)日：2022-08-18

申请号：US17176367

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Michael Chudzik ,  Max Batres ,  Michel Khoury

IPC: C30B29/40 ,  H01L21/02 ,  C30B33/08 ,  H01L33/00

Abstract: Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.

公开(公告)号：US20240258106A1

公开(公告)日：2024-08-01

申请号：US18162074

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L29/2003

Abstract: The present technology includes semiconductor structures. Structures include a silicon-containing substrate, a layer of metal nitride overlying the silicon-containing substrate, a structure overlying the layer of the metal nitride, and an oxygen rich layer disposed between the layer of the metal nitride and the structure. The structure is formed from a material that includes a gallium-containing material, and aluminum nitride material, or a combination thereof, where at least about 90 wt. % of the material exhibits a metal-polarity.

公开(公告)号：US20230299236A1

公开(公告)日：2023-09-21

申请号：US17695206

申请日：2022-03-15

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Ria Someshwar

IPC: H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/0095

Abstract: Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a first layer of a first metal nitride overlying the silicon-containing substrate. The structures may include a second layer of a second metal nitride overlying the first layer of the first metal nitride. The structures may include a gallium nitride structure overlying the layer of the metal nitride.

公开(公告)号：US20230117013A1

公开(公告)日：2023-04-20

申请号：US17507134

申请日：2021-10-21

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Ria Someshwar

IPC: H01L33/00 ,  H01L33/32

Abstract: Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a layer of a metal nitride overlying the silicon-containing substrate. The structures may include a gallium nitride structure overlying the layer of the metal nitride. The structures may include an oxygen-containing layer disposed between the layer of the metal nitride and the gallium nitride structure.