- 专利标题: METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
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申请号: US17738978申请日: 2022-05-06
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公开(公告)号: US20220262965A1公开(公告)日: 2022-08-18
- 发明人: Staffan Westerberg , Gabriel Harley
- 申请人: SunPower Corporation
- 申请人地址: US CA San Jose
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L31/0236
- IPC分类号: H01L31/0236 ; H01L31/0224 ; H01L31/0216 ; H01L31/18
摘要:
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.
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